Evidence for effective mass reduction in GaAs/AlGaAs quantum wells
نویسندگان
چکیده
منابع مشابه
Effective mass from microwave photoresistance measurements in GaAs/AlGaAs quantum wells
We have performed microwave photoresistance measurements in high mobility GaAs/AlGaAs quantum wells and investigated the value of the effective mass. The effective mass, obtained from the period of microwave-induced resistance oscillations (MIRO), was found to be about 12% lower than the band mass in GaAs, m b. In contrast, the measured magnetoplasmon dispersion (MPR) revealed an effective mass...
متن کاملLow-threshold GaAs/AIGaAs quantum-well lasers grown by organometallic vapor-phase epitaxy using trimethylamine alane
We have utilized a new aluminum source, trimethylamine alane (TMAA), in the,growth of graded-index separate-confinement heterostructure single quantum-well GaAs/AlGaAs laser structures by low pressure (30 Torr) organometallic vapor-phase epitaxy. We find lower carbon and oxygen incorporation in AlGaAs epilayers. using TMAA since it does not contain a direct Al-C bond and it is not susceptible t...
متن کاملWavelength tuning in GaAs/AlGaAs quantum wells by InAs submonolayer insertion
Wavelength tuning of exciton emissions has been achieved simply by inserting an InAs submonolayer at the centre of GaAs quantum wells during molecular beam epitaxy growth. Photoluminescence measurements show that the emission energy can be effectively tuned from the quantum-well-determined energy down to less than the band gap of GaAs, depending on the well width as well as the InAs layer thick...
متن کاملVery low saturation densities in strained InGaAdAIGaAs multiple quantum wells
The saturation of excitonic absorption in strained InGaAs/AlGaAs quantum wells is systematically measured as a function of strain. By comparison with an unstrained GaAs/AlGaAs quantum well sample a reduction by a factor of up to 9 in the saturation carrier density is observed in strained samples with indium concentrations of 10% ‘and 15%. Very low saturation densities, as low as 0.82X 1017 cmm3...
متن کامل- m at . m es - h al l ] 2 4 A pr 1 99 7 Critical Behavior of Nuclear - Spin Diffusion in GaAs / AlGaAs Heterostructures near Landau Level Filling ν = 1
Thermal measurements on a GaAs/AlGaAs heterostructure reveal that the state of the confined two-dimensional electrons dramatically affects the nuclear-spin diffusion near Landau level filling factor ν=1. The experiments provide quantitative evidence that the sharp peak in the temperature dependence of heat capacity near ν=1 is due to an enhanced nuclear-spin diffusion from the GaAs quantum well...
متن کامل